Doped or Quantum-Dot Layers as In Situ Etch-Stop Indicators for III/V Semiconductor Reactive Ion Etching (RIE) Using Reflectance Anisotropy Spectroscopy (RAS)
| Author: | Guilherme Sombrio, Emerson Candido de OliveiraORCiD, Johannes Strassner, Johannes Richter, Christoph DoeringORCiD, Henning FouckhardtORCiD |
|---|---|
| URL: | https://www.mdpi.com/2072-666X/12/5/502 |
| DOI: | https://doi.org/10.3390/mi12050502 |
| ISSN: | 2072-666X |
| Journal: | Micromachines |
| Publisher: | MDPI |
| Document Type: | Research Article |
| Language: | English |
| Year of first Publication: | 2021 |
| Release Date: | 2022/05/13 |
| Volume: | 12 |
| Issue: | 5 |
| Article Number: | 502 |
| Page Number: | 14 |
| First Page: | 1 |
| Last Page: | 14 |
| Faculties / Organisational entities: | RPTU in Kaiserslautern / Fachbereich Physik |
| Open access state: | Gold Open-Access |
| Publication funding: | DFG-Fonds |
| RPTU: | Kaiserslautern |
| Research funding: | DFG |
| Created at the RPTU: | Yes |